| 摘要 |
The present invention relates to a plasma generating apparatus using a dual plasma source, and a substrate treating apparatus including the same. According to an embodiment of the present invention, the plasma generating apparatus comprises: an RF power source which supplies an RF signal; a plasma chamber which provides a space where plasma is generated; a first plasma source installed in one part of the plasma chamber, and generating the plasma; and a second plasma source installed in the other part of the plasma chamber, and generating the plasma. The second plasma source comprises: multiple insulating loops formed along the circumference of the plasma chamber, and having a gas moving route where process gas is injected inside and moved to the plasma chamber; and multiple electromagnetic field applying devices combined with the insulating loops, receiving the RF signal, and exciting the process gas, which is moved through the gas moving route, in a plasma state. |
