发明名称 Wiring fault detection method, wiring fault detection apparatus, and method for manufacturing semiconductor substrate
摘要 A wiring fault detection method according to an embodiment of the present invention is capable of determining that, in a case where a temperature rise value of a faulty portion exceeds a temperature rise threshold within a preset threshold of the number of frames, a corresponding pixel has a fault. A wiring fault detection apparatus according to the present invention includes a temperature measurement imaging unit that measure a temperature of a semiconductor substrate and forms an image thereof.
申请公布号 US9239341(B2) 申请公布日期 2016.01.19
申请号 US201214236992 申请日期 2012.08.30
申请人 SHARP KABUSHIKI KAISHA 发明人 Karita Yuji
分类号 G01R31/302;G01R31/26;G01R1/07;G09G3/00;H01L21/66;G01R31/28 主分类号 G01R31/302
代理机构 Keating & Bennett, LLP 代理人 Keating & Bennett, LLP
主权项 1. A wiring fault detection method comprising: a voltage application step of applying a predetermined voltage to a wiring line formed on a semiconductor substrate; a measurement step of continuously measuring, for a certain time period, a temperature of a region of at least a part of the semiconductor substrate to which a voltage is applied in the voltage application step, by using an infrared camera; a judgment step of judging whether or not a temperature rise value, which is derived by subtracting a temperature value of the semiconductor substrate before the voltage is applied from a temperature value measured in the measurement step, is larger than or equal to a threshold; and a fault determination step of determining that the wiring line formed in the region has a short-circuit fault in a case where it is judged in the judgment step that the temperature rise value is larger than or equal to the threshold, and determining that the wiring line does not have a short-circuit fault in a case where it is judged that the temperature rise value is smaller than the threshold; wherein the threshold used in the judgment step is acquired by, using an average value and a standard deviation of a histogram of a background image created by integrating and averaging differences between adjacent frames of a moving image acquired by continuously imaging, for a certain time period, the semiconductor substrate before the voltage is applied by using the infrared camera, adding the average value to an integral multiple of the standard deviation.
地址 Osaka JP