发明名称 |
Controllers that generate output bits for storage in non-volatile memory devices by puncturing code word bits and methods for operating the same |
摘要 |
An operating method of a controller includes selecting bits of code word to be punctured; detecting locations of incapable bits of an input word based on locations of the bits to be punctured and a structure of a generation matrix calculation unit; refreezing the input word such that frozen bits and incapable bits of the input word overlap; generating input word bits by replacing information word bits with frozen bits based on the refreezing result; generating the code word by performing generation matrix calculation on the input word bits; generating output bits by puncturing the code word based on locations of the bits to be punctured; and transmitting the output bits to a nonvolatile memory device. |
申请公布号 |
US9239778(B2) |
申请公布日期 |
2016.01.19 |
申请号 |
US201314054964 |
申请日期 |
2013.10.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;POSTECH ACADEMY-INDUSTRY FOUNDATION |
发明人 |
Lee Kijun;Kong Junjin;Shin Dong-Min;Yang Kyeongcheol;Lim Seung-Chan |
分类号 |
G06F3/00;G06F13/00;G06F12/00;H03M13/11;H03M13/13;H03M13/00 |
主分类号 |
G06F3/00 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A method of operating a controller for a nonvolatile memory device, the controller including a polar code encoder and decoder circuit to encode input bits to output bits, the method comprising:
selecting, by the polar code encoder and decoder circuit, locations of the output bits, to be punctured; detecting, by the polar code encoder and decoder circuit, locations of the input bits lost by puncturing based on the locations of the output bits to be punctured and a structure of a generation matrix associated with a polar code encoding; refreezing the input bits such that frozen bits and incapable bits overlap to generate modified input bits, the incapable bits corresponding to the locations of the lost input bits; performing the polar code encoding to generate the output bits based on the modified input bits; puncturing the output bits to generate punctured output bits based on the locations of the output bits to be punctured; and transmitting the punctured output bits to the nonvolatile memory device. |
地址 |
Gyeonggi-Do KR |