Memory component, memory device, and method of operating memory device

摘要

A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.

主权项

1. A memory device comprising:
a first electrode; a second electrode; and a memory layer between the first and second electrodes, wherein,
the memory layer includes (a) a first memory layer containing aluminum (Al) and a chalcogen element, and (b) a second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide, andthe first memory layer has a resistance lower than the resistance value of the second memory layer.