发明名称 |
Light emitting diode device having super lattice structure and a nano-structure layer |
摘要 |
A light emitting diode device is provided, which comprises a silicon-based substrate, a buffer layer, a super lattice structure layer, a nano-structure layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The buffer layer is formed on the silicon-based substrate, the super lattice structure layer is formed on the buffer layer, the nano-structure layer is formed on the super lattice structure layer, a first semiconductor layer is formed on the nano-structure layer, and the light emitting layer is formed between the first semiconductor layer and the second semiconductor layer. The super lattice layer and the nano-structure can release the stress within the light emitting diode device, and reduce the epitaxy defect, so that the internal quantum effect and the external quantum effect can be increased. |
申请公布号 |
US9240518(B2) |
申请公布日期 |
2016.01.19 |
申请号 |
US201414461990 |
申请日期 |
2014.08.18 |
申请人 |
National Chiao Tung University |
发明人 |
Lee Chia-Yu;Lin Da-Wei;Tzou An-Jye;Kuo Hao-Chung |
分类号 |
H01L33/12;H01L33/32;H01L33/06;H01L33/00 |
主分类号 |
H01L33/12 |
代理机构 |
Bacon & Thomas, PLLC |
代理人 |
Bacon & Thomas, PLLC |
主权项 |
1. A light emitting diode device having a super lattice structure layer, comprising:
a silicon-based substrate; a buffer layer formed on the silicon-based substrate, wherein the buffer layer comprises aluminum gallium nitride (AlGaN); a super lattice structure layer formed on the buffer layer such that the buffer layer is between the silicon-based substrate and the super lattice structure layer, wherein the super lattice structure layer is composed of multi-layer of aluminum gallium nitride/gallium nitride (AlGaN/GaN) pairs and piled up by 2 nm scale dielectric materials such as 1 nm/1 nm, 2 nm/2 nm or 2 nm/6 nm of aluminum gallium nitride/gallium nitride (AlGaN/GaN); a nano-structure layer formed in contact with the super lattice structure layer, wherein the nano-structure layer is selected from the group consisting of silicon dioxide (SiO2), silicon nitride (SiNx), air voids and composite single-layer dielectric material; a first semiconductor layer formed on the nano-structure layer and portions of the first semiconductor layer are in contact with the super lattice structure layer, wherein the first semiconductor layer is n-type GaN; a light emitting layer formed on the first semiconductor layer, wherein the light emitting layer is selected from the group consisting of single Quantum well and multi-Quantum well; and a second semiconductor layer formed on the light emitting layer, and the second semiconductor layer is p-type GaN. |
地址 |
Taiwan CN |