Image sensors having transfer gate electrodes in trench

摘要

Provided is an image sensor including a semiconductor substrate having a trench and having a first conductivity type, a photoelectric conversion layer formed in the semiconductor substrate below the trench to have a second conductivity type, first and second transfer gate electrodes provided in the trench covered with a gate insulating layer, a first charge-detection layer formed in the semiconductor substrate adjacent to the first transfer gate electrode, and a second charge-detection layer formed in the semiconductor substrate adjacent to the second transfer gate electrode.

主权项

1. An image sensor, comprising:
a semiconductor substrate including a trench, the semiconductor substrate having a first conductivity type; a photoelectric conversion layer in the semiconductor substrate below the trench, the photoelectric conversion layer having a second conductivity type that is opposite the first conductivity type; first and second transfer gate electrodes that are each at least partly in the trench; a gate insulating layer that is at least partly in the trench and that is interposed between the first and second transfer gate electrodes and the photoelectric conversion layer; a first charge-detection layer in the semiconductor substrate adjacent to the first transfer gate electrode; and a second charge-detection layer in the semiconductor substrate adjacent to the second transfer gate electrode, wherein bottom surfaces of the respective first and second transfer gate electrodes are below the top surface of the semiconductor substrate.