发明名称 Solar cell
摘要 A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type, a front passivation region including a plurality of layers which are sequentially positioned on the emitter region, a back passivation region which is positioned on a back surface opposite the front surface of the substrate and includes three layers, a plurality of front electrodes which pass through the front passivation region and are connected to the emitter region, and at least one back electrode which passes through the back passivation region and is connected to the substrate.
申请公布号 US9240499(B2) 申请公布日期 2016.01.19
申请号 US201213543135 申请日期 2012.07.06
申请人 LG ELECTRONICS INC. 发明人 Cheong Juhwa;Yu Yiyin;Yang Youngsung;Jin Yongduk;Ha Manhyo;Lee Seongeun
分类号 H01L31/00;H01L31/0216 主分类号 H01L31/00
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A solar cell comprising: a substrate of a first conductive type; an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type; a front passivation region including a plurality of layers which are sequentially positioned on the emitter region; a back passivation region which is positioned on a back surface opposite the front surface of the substrate and includes three layers; a plurality of front electrodes which pass through the front passivation region and are connected to the emitter region; and at least one back electrode which passes through the back passivation region and is connected to the substrate, wherein the plurality of layers of the front passivation region include: a silicon oxide layer which is positioned on the emitter region and is formed of silicon oxide; an aluminum oxide layer which is positioned on the silicon oxide layer and is formed of aluminum oxide; and a silicon nitride layer which is positioned on the aluminum oxide layer and is formed of silicon nitride; wherein the three layers of the back passivation region include: a first back passivation layer which is positioned on the back surface of the substrate and is formed of silicon oxide; a second back passivation layer which is positioned on the first back passivation layer and is formed of silicon nitride; and a third back passivation layer which is positioned on the second back passivation layer and is formed of aluminum oxide, wherein the second back passivation layer is positioned between the first back passivation layer and the third back passivation layer, wherein the at least one back electrode includes a plurality of back electrodes which locally abut the back surface of the substrate and are separated from one another, wherein the solar cell further comprises a back surface field region which is positioned at the back surface of the substrate and abuts the plurality of back electrodes, wherein the first back passivation layer is directly on the back surface field region, the second back passivation layer is directly on the first back passivation layer, and the third back passivation layer is directly on the second back passivation layer, wherein the third back passivation layer is formed as an outermost layer of the three layers of the back passivation region, and wherein the plurality of layers of the front passivation region including the silicon oxide layer, the aluminum oxide layer, and the silicon nitride layer sequentially positioned on the front surface of the substrate, and the three layers of the back passivation region including the first back passivation layer, the second back passivation layer, and third back passivation layer sequentially positioned on the back surface of the substrate, are asymmetrical to each other.
地址 Seoul KR