SCR with fin body regions for ESD protection

摘要

An electrostatic discharge protection circuit is disclosed. A method of manufacturing a semiconductor structure includes forming a semiconductor controlled rectifier including a first plurality of fingers between an n-well body contact and an anode in an n-well, and a second plurality of fingers between a p-well body contact and a cathode in a p-well.

主权项

1. A method of manufacturing a semiconductor structure, comprising:
forming a semiconductor controlled rectifier comprising a first plurality of fingers of semiconductor material between an n-well body contact and an anode in an n-well, and a second plurality of fingers of semiconductor material between a p-well body contact and a cathode in a p-well, wherein the semiconductor controlled rectifier comprises: a first dielectric structure on and between ones of the first plurality of fingers of semiconductor material; and a second dielectric structure on and between ones of the second plurality of fingers of semiconductor material.