High-performance reverse-conduction field-stop (RCFS) insulated gate bipolar transistor and method for manufacturing the same

摘要

A high-performance reverse-conduction field-stop (RCFS) insulated gate bipolar transistor (IGBT) includes a first conductive type substrate, a plurality of trenches defined on a bottom face of the substrate, a plurality of first conductive type doping regions formed on bottom face of the trenches, a second conductive type doping region formed on bottom face of the substrate, and a first conductive type field stop doping region formed in the substrate and separated from the bottom face of the substrate by a field stop depth, where the field stop depth is larger than a depth of the trench. Due to a separation between the first conductive type doping regions and the second conductive type doping region, Zener diode can be prevented from forming on bottom side of the substrate and the performance of IGBT can be accordingly enhanced.

主权项

1. A high-performance reverse-conduction field-stop (RCFS) insulated gate bipolar transistor (IGBT), comprising:
a first conductive type substrate; a plurality of trenches defined on a bottom face of the first conductive type substrate; a plurality of first conductive type doping regions formed on bottom faces of the trenches; a second conductive type doping region formed on the bottom face of the first conductive type substrate; and a first conductive type field stop doping region formed in the first conductive type substrate and separated with the bottom face of the first conductive type substrate with a field stop depth, where the field stop depth is larger than a depth of the trench, wherein the first conductive type is either N type or P type, and the second conductive type is either P type or N type correspondingly.