Group III-N nanowire transistors

摘要

A group III-N nanowire is disposed on a substrate. A longitudinal length of the nanowire is defined into a channel region of a first group III-N material, a source region electrically coupled with a first end of the channel region, and a drain region electrically coupled with a second end of the channel region. A second group III-N material on the first group III-N material serves as a charge inducing layer, and/or barrier layer on surfaces of nanowire. A gate insulator and/or gate conductor coaxially wraps completely around the nanowire within the channel region. Drain and source contacts may similarly coaxially wrap completely around the drain and source regions.

主权项

1. A group III-N transistor, comprising:
a nanowire disposed on a substrate, wherein a longitudinal length of the nanowire further comprises:
a channel region of a first group III-N material;a source region electrically coupled with a first end of the channel region; anda drain region electrically coupled with a second end of the channel region, a gate stack comprising a gate insulator and a gate conductor coaxially wrapping completely around the channel region, and
a second group III-N material disposed between the first group III-N material and gate stack along at least a portion of the channel region.