Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus

摘要

It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
(a) loading a substrate into a processing chamber; (b) forming a nitride film including a conductive film or an insulating film on the substrate by alternately supplying a plurality of source gases into the processing chamber; (c) unloading the substrate from the processing chamber; (d) changing a composition of the nitride film adhered to the processing chamber formed in the step (b) into an oxide film by oxidizing the nitride film adhered to the processing chamber by supplying an oxygen-containing gas into the processing chamber; and (e) removing the oxide film by supplying a cleaning gas into the processing chamber and exhausting the cleaning gas from the processing chamber after performing a cycle of the steps (a), (b), (c) and (d) a plurality of times, wherein a nitro n concentration of a surface of the nitride film adhered to the processing chamber is decreased and an oxygen concentration of the surface of the nitride film adhered to the processing chamber is increased in the step (d).