发明名称 Tunable SOI laser
摘要 A wavelength tunable silicon-on-insulator (SOI) laser comprising: a laser cavity including: a semiconductor gain medium having a front end and a back end; and a phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium; wherein the phase-tunable waveguide platform includes a first Distributed Bragg Reflector (DBR) and a second Distributed Bragg Reflector (DBR); at least one of the Distributed Bragg Reflectors having a comb reflectance spectrum; and wherein a mirror of the laser cavity is located at the back end of the semiconductor gain medium.
申请公布号 US9240673(B2) 申请公布日期 2016.01.19
申请号 US201514601101 申请日期 2015.01.20
申请人 Rockley Photonics Limited 发明人 Rickman Andrew;Zilkie Aaron John
分类号 H01S3/10;H01S5/125;H01S5/14;H01S5/02;H01S5/10;H01S5/30;H01S5/32;H01S5/34;H01S3/1055;H01S3/106;H01S5/028;H01S5/12 主分类号 H01S3/10
代理机构 Christie, Parker & Hale, LLP 代理人 Christie, Parker & Hale, LLP
主权项 1. A wavelength tunable silicon-on-insulator (SOI) laser comprising: a laser cavity including: a semiconductor gain medium having a front end and a back end; anda phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium;wherein the phase-tunable waveguide platform includes: a first Distributed Bragg Reflector (DBR);a first transition region on a first side of the first DBR;a second transition region on a second side of the first DBR; anda second Distributed Bragg Reflector (DBR);at least one of the Distributed Bragg Reflectors having a comb reflectance spectrum;wherein a highly reflective mirror is located at the back end of the semiconductor gain medium forming a mirror of the laser cavity such that the gain medium functions as a reflective semiconductor optical amplifier (RSOA);wherein at the first transition region a waveguide of a first height and a first width is coupled to a waveguide of a second height and a second width, the first height being different from the second height and/or the first width being different from the second width;wherein at the second transition region a waveguide of the second height and the second width is coupled to a waveguide of a third height and a third width, the second height being different from the third height and/or the second width being different from the third width; andwherein the second transition region forms the output of the laser.
地址 London GB