发明名称 |
Tunable SOI laser |
摘要 |
A wavelength tunable silicon-on-insulator (SOI) laser comprising: a laser cavity including: a semiconductor gain medium having a front end and a back end; and a phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium; wherein the phase-tunable waveguide platform includes a first Distributed Bragg Reflector (DBR) and a second Distributed Bragg Reflector (DBR); at least one of the Distributed Bragg Reflectors having a comb reflectance spectrum; and wherein a mirror of the laser cavity is located at the back end of the semiconductor gain medium. |
申请公布号 |
US9240673(B2) |
申请公布日期 |
2016.01.19 |
申请号 |
US201514601101 |
申请日期 |
2015.01.20 |
申请人 |
Rockley Photonics Limited |
发明人 |
Rickman Andrew;Zilkie Aaron John |
分类号 |
H01S3/10;H01S5/125;H01S5/14;H01S5/02;H01S5/10;H01S5/30;H01S5/32;H01S5/34;H01S3/1055;H01S3/106;H01S5/028;H01S5/12 |
主分类号 |
H01S3/10 |
代理机构 |
Christie, Parker & Hale, LLP |
代理人 |
Christie, Parker & Hale, LLP |
主权项 |
1. A wavelength tunable silicon-on-insulator (SOI) laser comprising:
a laser cavity including:
a semiconductor gain medium having a front end and a back end; anda phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium;wherein the phase-tunable waveguide platform includes:
a first Distributed Bragg Reflector (DBR);a first transition region on a first side of the first DBR;a second transition region on a second side of the first DBR; anda second Distributed Bragg Reflector (DBR);at least one of the Distributed Bragg Reflectors having a comb reflectance spectrum;wherein a highly reflective mirror is located at the back end of the semiconductor gain medium forming a mirror of the laser cavity such that the gain medium functions as a reflective semiconductor optical amplifier (RSOA);wherein at the first transition region a waveguide of a first height and a first width is coupled to a waveguide of a second height and a second width, the first height being different from the second height and/or the first width being different from the second width;wherein at the second transition region a waveguide of the second height and the second width is coupled to a waveguide of a third height and a third width, the second height being different from the third height and/or the second width being different from the third width; andwherein the second transition region forms the output of the laser. |
地址 |
London GB |