Three-dimensional semiconductor devices and methods of fabricating the same

摘要

Three-dimensional semiconductor devices are provided. The three-dimensional semiconductor device includes a substrate, a buffer layer on the substrate. The buffer layer includes a material having an etching selectivity relative to that of the substrate. A multi-layer stack including alternating insulation patterns and conductive patterns is provided on the buffer layer opposite the substrate. One or more active patterns respectively extend through the alternating insulation patterns and conductive patterns of the multi-layer stack and into the buffer layer. Related fabrication methods are also discussed.

主权项

1. A method of fabricating a three-dimensional semiconductor device, the method comprising:
forming a buffer layer on a substrate; alternately forming sacrificial layers and interlayer insulation layers on the buffer layer; patterning at least the sacrificial layers and the interlayer insulation layers to form respective openings extending into the buffer layer; forming gate insulation layers on sidewalls of the respective openings; removing lower portions of the gate insulation layers to expose lower sidewalls of the respective openings; forming an active layer in the respective openings to define respective active patterns therein; and replacing the sacrificial layers with conductive layers.