发明名称 Methods, structures, and designs for self-aligning local interconnects used in integrated circuits
摘要 An integrated circuit includes a gate electrode level region that includes a plurality of linear-shaped conductive structures. Each of the plurality of linear-shaped conductive structures is defined to extend lengthwise in a first direction. Some of the plurality of linear-shaped conductive structures form one or more gate electrodes of corresponding transistor devices. A local interconnect conductive structure is formed between two of the plurality of linear-shaped conductive structures so as to extend in the first direction along the two of the plurality of linear-shaped conductive structures.
申请公布号 US9240413(B2) 申请公布日期 2016.01.19
申请号 US201414188321 申请日期 2014.02.24
申请人 Tela Innovations, Inc. 发明人 Smayling Michael C.;Becker Scott T.
分类号 H01L27/088;H01L27/105;H01L21/285;H01L21/768;H01L21/8234;H01L21/8238;H01L27/092;G06F17/50;G03F1/00 主分类号 H01L27/088
代理机构 Martine Penilla Group, LLP 代理人 Martine Penilla Group, LLP
主权项 1. An integrated circuit, comprising: at least four linear-shaped conductive structures formed to extend lengthwise in a first direction in a parallel manner to each other and each respectively including a gate electrode portion and an extending portion that extends away from the gate electrode portion, the gate electrode portions of the at least four linear-shaped conductive structures respectively forming gate electrodes of different transistors, the extending portions of the at least four linear-shaped conductive structures including at least two different extending portion lengths, wherein two of the at least four linear-shaped conductive structures respectively form two transistors of a first transistor type having a shared diffusion region of a first diffusion type, wherein two of the at least four linear-shaped conductive structures respectively form two transistors of a second transistor type having a shared diffusion region of a second diffusion type, wherein the shared diffusion region of the first diffusion type is electrically connected to the shared diffusion region of the second diffusion type; and a local interconnect conductive structure formed between at least two of the at least four linear-shaped conductive structures so as to extend in the first direction along the at least two of the at least four linear-shaped conductive structures.
地址 Los Gatos CA US