发明名称 |
Methods, structures, and designs for self-aligning local interconnects used in integrated circuits |
摘要 |
An integrated circuit includes a gate electrode level region that includes a plurality of linear-shaped conductive structures. Each of the plurality of linear-shaped conductive structures is defined to extend lengthwise in a first direction. Some of the plurality of linear-shaped conductive structures form one or more gate electrodes of corresponding transistor devices. A local interconnect conductive structure is formed between two of the plurality of linear-shaped conductive structures so as to extend in the first direction along the two of the plurality of linear-shaped conductive structures. |
申请公布号 |
US9240413(B2) |
申请公布日期 |
2016.01.19 |
申请号 |
US201414188321 |
申请日期 |
2014.02.24 |
申请人 |
Tela Innovations, Inc. |
发明人 |
Smayling Michael C.;Becker Scott T. |
分类号 |
H01L27/088;H01L27/105;H01L21/285;H01L21/768;H01L21/8234;H01L21/8238;H01L27/092;G06F17/50;G03F1/00 |
主分类号 |
H01L27/088 |
代理机构 |
Martine Penilla Group, LLP |
代理人 |
Martine Penilla Group, LLP |
主权项 |
1. An integrated circuit, comprising:
at least four linear-shaped conductive structures formed to extend lengthwise in a first direction in a parallel manner to each other and each respectively including a gate electrode portion and an extending portion that extends away from the gate electrode portion, the gate electrode portions of the at least four linear-shaped conductive structures respectively forming gate electrodes of different transistors, the extending portions of the at least four linear-shaped conductive structures including at least two different extending portion lengths, wherein two of the at least four linear-shaped conductive structures respectively form two transistors of a first transistor type having a shared diffusion region of a first diffusion type, wherein two of the at least four linear-shaped conductive structures respectively form two transistors of a second transistor type having a shared diffusion region of a second diffusion type, wherein the shared diffusion region of the first diffusion type is electrically connected to the shared diffusion region of the second diffusion type; and a local interconnect conductive structure formed between at least two of the at least four linear-shaped conductive structures so as to extend in the first direction along the at least two of the at least four linear-shaped conductive structures. |
地址 |
Los Gatos CA US |