| 摘要 |
An apparatus for etching a semiconductor device using plasma includes: a bottom electrode; an RF pulse power generation part connected to the bottom electrode; a top electrode arranged to face the bottom electrode; a DC pulse generation part connected to the top electrode; and a controller which controls RF pulse power applied to the bottom electrode from an RF signal generation part, an amplitude and a period of a DC pulse applied to the top electrode from the DC pulse generation part. The controller applies the RF pulse power of a first amplitude and a first DC pulse to the bottom electrode and the top electrode respectively during a first cycle when etching is performed, and applies the RF pulse power of a second amplitude smaller than the first amplitude and a second DC pulse to the bottom electrode and the top electrode until a fixed time from a time when the first cycle ends during a second cycle among the first cycles, and applies the RF pulse power of a third amplitude larger than the second amplitude to the bottom electrode as stopping applying the DC pulse until a time when the next first cycle starts from a fixed time. |
