| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory capable of highly accurately writing and reading a magnetic domain, a shift resistor memory, a method for operating a magnetic memory, and a method for manufacturing a magnetic memory.SOLUTION: A magnetic memory 10 includes a first magnetic part 101, a first magnetic layer 102, a first recording/reproducing element 103, a first electrode 104, and a second electrode 105. The first magnetic part 101 extends in a first direction and can retain a plurality of magnetic domains arranged in the first direction. The first magnetic part 101 is also columnar and includes a hollow part. The first magnetic layer 102 is connected to a first end part 101a of the first magnetic part 101, and extends in a direction crossing the first direction. The first recording/reproducing element 103 is provided in contact with the first magnetic layer 102. The first electrode 104 is electrically connected to the first magnetic layer 102. The second electrode 105 is connected to a second end part 101b of the first magnetic part 101. The second end part 101b is located on the side opposite to the first end part 101a. |
