| 摘要 |
PROBLEM TO BE SOLVED: To reduce bit line parasitic capacity in a semiconductor device.SOLUTION: In a semiconductor device including, on a semiconductor substrate, bit lines extending in a first direction and connected with a plurality of memory cells, and word lines extending in a second direction crossing the first direction, further includes active regions surrounded by a plurality of first element isolation regions and extending in a third direction while inclining in the first direction and a plurality of second element isolation regions extending in the second direction, word grooves extending in the second direction while crossing the active regions, word lines for filling below the word grooves, and control word lines arranged in the word grooves on the word lines via an insulating film. |
