| 摘要 |
PROBLEM TO BE SOLVED: To prevent formation of an unnecessary hole on a bottom face of a cylinder hole for forming a bottom electrode of a capacitor.SOLUTION: A semiconductor device manufacturing method of the present embodiment comprises: a process of burying polysilicon 22 inside a trench T3 which pierces an interlayer oxide film 20; a process of forming side wall insulation films which covers both inner side walls of the trench T3 exposed on the upper side of the polysilicon 22; and a process of forming a plurality of capacitive contact plugs CPLs by first etching using the side wall insulation films as a mask and forming buried nitride films which are respectively buried in a trench T4 created in the trench T3 by the first etching and a hole H2 obtained by selectively removing at least an upper part of at least a portion of the interlayer oxide film 20, which does not overlap a bit line structure. |
