| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having a high photoelectric conversion efficiency.SOLUTION: A method of manufacturing a photoelectric conversion device, comprises: forming a coating M containing the 11-group element, the 13-group element and the 16-group element such as selenium element and sulfur element on an electrode layer 2; and heating the coating M under an environment containing selenium element to obtain a I-III-VI group compound semiconductor layer. When a site located to be nearer to the electrode layer 2 side of the coating M than the center of the coating M in thickness is represented by a first site M1 and the remaining portion is represented by a second site M2, the first site M1 contains the 11-group element, the 13-group element and at least selenium element as the 16-group element, and the second site M2 contains the 11-group element, the 13-group element and at least sulfur element as the 16-group element. If the average atom concentration of selenium element is represented by C, and the average atom concentration of sulfur element is represented by C, the ratio C/(C+C) at the first site M1 makes larger than that at the second site M2. |
