PATTERNING METHOD USING METAL MASK, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE COMPRISING THE SAME PATTERNING METHOD

摘要

A technical idea of the present invention is to provide a patterning method using a metal mask, which can easily form a hole at a high aspect ratio, and a method for manufacturing a semiconductor device including the patterning method. The patterning method comprises the steps of: sequentially forming a lower metal layer and an upper metal layer on a layer to be etched; forming an upper metal mask by patterning the upper metal layer; forming a lower metal mask by patterning the lower metal layer using the upper metal mask; and patterning the layer to be etched by using the upper metal mask.