| 摘要 |
PROBLEM TO BE SOLVED: To provide a reverse conducting power semiconductor device.SOLUTION: A reverse conducting power semiconductor device comprises a wafer 10 including a first main side 11 and a second main side 15 arranged in parallel to the first main side 11. The device further comprises a plurality of diode cells 96 and a plurality of GCT cells 91. Each GCT cell 91 comprises a thyristor cathode electrode 2, a first conductivity-type thyristor cathode layer 4, a second conductivity-type thyristor base layer 6, a first conductivity-type drift layer 3, a first conductivity-type thyristor buffer layer 8, a second conductivity-type thyristor anode layer 5, and a thyristor anode electrode 25 in this order between the first main side 11 and the second main side 15. Each GCT cell 91 further includes a gate electrode 7 arranged lateral to the thyristor cathode layer 4, and separated from the thyristor cathode layer 4 by the thyristor base layer 6. |
