发明名称 THIN FILM SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a thin film transistor which can control leakage current to ensure visual quality of a liquid crystal display device.SOLUTION: A thin film transistor 19 comprises a semiconductor layer 29, gate electrodes 23, 24, first light-shielding electrodes 26, 27 and second light-shielding electrodes 34, 35. The first light-shielding electrodes 26, 27 are arranged on the opposite side to the gate electrodes 23, 24 with respect to the semiconductor layer 29 and arranged opposite to channel regions 41, 42 to shield light incident on the channel regions 41, 42. The second light-shielding electrodes 34, 35 are arranged on the opposite side to the semiconductor layer 29 with respect to the gate electrodes 23, 24, and shield light incident on the channel regions 41, 42, and electrically connected to either of a signal line 17 or a pixel electrode 20.
申请公布号 JP2016009719(A) 申请公布日期 2016.01.18
申请号 JP20140128377 申请日期 2014.06.23
申请人 JAPAN DISPLAY INC 发明人 TADA MASAHIRO;NAKAMURA TAKU
分类号 H01L21/336;G02F1/1368;H01L21/28;H01L29/786 主分类号 H01L21/336
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