SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device and a method of manufacturing the same capable of improving breakdown resistance.SOLUTION: A silicon carbide semiconductor device 1 comprises impurity doped regions (a JTE region 2 and/or guard ring regions 3) arranged in a silicon carbide layer so as to surround an element region IR in a plan view, and containing p-type impurity. The impurity doped region has a peak concentration of the p-type impurity at a position in the silicon carbide layer 10 apart from a first principal surface 10a. The peak concentration is 1×10cmor more and 5×10cmor less. The p-type impurity is ion-implanted into the silicon carbide layer 10 to form the impurity doped region. Then, the silicon carbide layer 10 is subjected to thermal oxidation treatment to form a silicon dioxide film covering the first principal surface 10a of the silicon carbide layer 10 and to reduce the p-type impurity concentration in the vicinity of the first principal surface 10a.