| 摘要 |
PROBLEM TO BE SOLVED: To provide a copper nitride bipolar semiconductor thin film in which p/n polarity and carrier concentration are controlled.SOLUTION: In p-type and n-type copper nitride semiconductor thin films, a molecular beam epitaxy method having small particle energy in depositing the film is used in order to suppress damage to a copper nitride thin film, a feed rate of a copper source and nitrogen radical is controlled by a quartz oscillator, a conduction type is controlled to be a p-type by controlling a chemical composition of copper nitride Cu3N to be created in excessive nitrogen, and on the other hand, controlled to be an n-type by controlling the chemical composition in excessive copper, a carrier concentration is 10cmor more, and electric conductivity is 10S cmor more. A pn-junction element is formed by laminating a p-type copper nitride semiconductor thin film and an n-type copper nitride semiconductor thin film creating homojunction having an in-plane lattice constant at 1% or less. In a manufacturing method of a copper nitride semiconductor thin film, a feed rate of a copper source and a nitrogen source is controlled, a composition of copper nitride to be created is controlled, and a conduction type is controlled to a p-type or an n-type. |
