| 摘要 |
PROBLEM TO BE SOLVED: To provide a pad for chemical mechanical polishing a substrate comprising at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, capable of providing desired planarization while minimizing defect formation.SOLUTION: A chemical mechanical polishing pad comprises a polyurethane polishing layer, where the polyurethane polishing layer composition exhibits an acid number equal to or greater than 0.5 mg(KOH)/g and a polishing surface exhibits a conditioning tolerance equal to or greater than 80%. The polishing layer is characterized by exhibiting a specific gravity greater than 0.6, a Shore D hardness of 5 to 80, and an elongation to break of 100 to 450%. |
