METHOD OF FORMING RESIST PATTERN AND RESIST COMPOSITION

摘要

The present invention relates to a method for forming a resist pattern including the processes of: forming a resist film by using a resist composition having solubility of a developer changed by acid generated by light exposure on a supporter; exposing light onto the resist film; and forming a resist pattern by developing the resist film. The resist composition contains an acidogenic agent, and the acidogenic agent includes a chemical compound (b1) having a sulfonium cation containing an ether group, and a chemical compound (b2) shown by the formula (b2). [R^21 refers to a ring type functional group capable of having a substitutional group. R^22 refers to F or a fluorinated alkyl group with carbon number C1-C5. Y^21 refers to a divalent connector containing a single bond or 0. V^21 refers to a single-bonded alkylene or fluorinated alkylene group. M′^(m＋) refers to an organic cation with the valence number of m.]