SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, GAS RECTIFYING UNIT AND RECORDING MEDIUM

摘要

The present invention is to improve manufacturing throughput, and to enhance process uniformity in a substrate surface or the characteristic of a layer formed on a substrate as well. The substrate processing device has a process chamber for accommodating a substrate; a substrate supporting part; a first gas supply part which supplies a first gas to the substrate; a second gas supply part which supplies a second gas to the substrate; a gas pressure equalizing part which equalizes a purge gas supplied from a plurality of portions; and a conductance adjusting part which supplies the purge gas pressure-equalized by the gas pressure equalizing part to an outer end part of the substrate supporting part, and adjusts exhaust conductance of at least one from the first gas and the second gas.