SEMICONDUCTOR STORAGE DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor storage device excellent in shape control of a laminate.SOLUTION: A semiconductor storage device manufacturing method comprises the step of simultaneously forming by dry etching using a mask layer formed on a laminate, first slits for shaping a part of a laminate having a plurality of layers of first processed films and a plurality of layers of second processed films each arranged in each gap between the first processed films to comb-shaped patterns each having a plurality of line parts and second slits for surrounding the comb-shaped patterns by a closed pattern.