| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can achieve easy control of etching on a contact hole and satisfactory contact between an electrode and an oxide semiconductor.SOLUTION: A semiconductor device has contact holes which pierce an interlayer insulation film, an oxide semiconductor layer, a source region and a drain region to reach an insulating substrate, where a source electrode or a drain electrode is formed on each of the contact holes. |
