发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which contributes to formation of a fine pattern while controlling manufacturing cost.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming on a first film, a layer to be a first mask pattern by using an exposure mask on which is formed a pattern where shapes in each of which a first part projecting in a second direction orthogonal to a first direction and a second part projecting in a direction opposite to the second direction are alternately arranged in the first direction on a reference line which extends in the first direction are placed at a predetermined pitch in the second direction; and a process of forming a layer to be a second mask pattern on a second film formed below the first film. |
申请公布号 |
JP2016009789(A) |
申请公布日期 |
2016.01.18 |
申请号 |
JP20140130204 |
申请日期 |
2014.06.25 |
申请人 |
MICRON TECHNOLOGY INC |
发明人 |
IZAWA MITSUTAKA;SUKEGAWA MITSUNARI |
分类号 |
H01L21/3205;G03F7/20;H01L21/027;H01L21/768;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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