发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which contributes to formation of a fine pattern while controlling manufacturing cost.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming on a first film, a layer to be a first mask pattern by using an exposure mask on which is formed a pattern where shapes in each of which a first part projecting in a second direction orthogonal to a first direction and a second part projecting in a direction opposite to the second direction are alternately arranged in the first direction on a reference line which extends in the first direction are placed at a predetermined pitch in the second direction; and a process of forming a layer to be a second mask pattern on a second film formed below the first film.
申请公布号 JP2016009789(A) 申请公布日期 2016.01.18
申请号 JP20140130204 申请日期 2014.06.25
申请人 MICRON TECHNOLOGY INC 发明人 IZAWA MITSUTAKA;SUKEGAWA MITSUNARI
分类号 H01L21/3205;G03F7/20;H01L21/027;H01L21/768;H01L21/8242;H01L27/108 主分类号 H01L21/3205
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