| 摘要 |
PROBLEM TO BE SOLVED: To prevent discharge of charge held by a charge storage layer from the charge storage layer.SOLUTION: A semiconductor device SD comprises a first pad PA1, a second pad PA2 and a third pad PA3 which are electrically connected to a gate electrode GE1 a drain electrode DE1 and a source electrode SE1 of a transistor TR1, respectively. The semiconductor device SD comprises a fourth pad PA4 different from the first pad PA1, the second pad PA2 and the third pad PA3; and a diode DIO electrically connected to the fourth pad PA4. The diode DIO has an anode (A) connected to between the source electrode SE1 and the third pad PA3 and a cathode (K) connected to the fourth pad PA4 in an electrical path. |
