发明名称 METHODS FOR MAUNFACTURING AND OPERATING MEMORY DEVICE AND METHOD FOR OPERATING THEREOF
摘要 A method for manufacturing a memory device according to the embodiment of the present invention includes a step of receiving a command from a host, and a step of transmitting at least one of the start addresses of defect-free memory regions for addressing modes to the host in response to the command.
申请公布号 KR20160005570(A) 申请公布日期 2016.01.15
申请号 KR20140084678 申请日期 2014.07.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MUN, KUI YON;CHO, YOUNG JIN;YOO, YOUNG KWANG
分类号 G11C29/04;G11C8/00 主分类号 G11C29/04
代理机构 代理人
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