发明名称 Resistive Devices and Methods of Operation Thereof
摘要 In one embodiment, a method of operating a resistive switching device includes applying a signal comprising a pulse on a first terminal of a two terminal resistive switching device having the first terminal and a second terminal. The resistive switching device has a first state and a second state. The pulse includes a first ramp from a first voltage to a second voltage over a first time period. The first time period is at least 0.1 times a total time period of the pulse.
申请公布号 US2016012885(A1) 申请公布日期 2016.01.14
申请号 US201514861680 申请日期 2015.09.22
申请人 Adesto Technologies Corporation ;Axon Technologies Corporation 发明人 Kamalanathan Deepak;Koushan Foroozan Sarah;Echeverry Juan Pablo Saenz;Dinh John;Hollmer Shane C.;Kozicki Michael
分类号 G11C13/00 主分类号 G11C13/00
代理机构 代理人
主权项 1. A semiconductor device comprising: a two terminal resistive switching device having a first terminal and a second terminal and having a first state and a second state; an access device having a first access terminal and a second access terminal coupled to the first terminal of the resistive switching device; a signal generator configured to generate a first ramp voltage from a first voltage to a second voltage over a first time period,a second ramp voltage from the second voltage to a third voltage over a second time period, wherein the second ramp voltage has an opposite slope to the first ramp voltage, wherein the first time period is at least 0.1 times a total time period of the first time period plus the second time period, wherein the second time period is at least 0.1 times the total time period of the first time period plus the second time period; and an access circuit configured to apply the signal on the first access terminal, wherein the resistive switching device is configured to change from the first state to the second state in response to the signal.
地址 Sunnyvale CA US