发明名称 |
PROCESS FOR FORMING MULTI-LAYER FILM AND PATTERNING PROCESS |
摘要 |
The invention provides a process for forming a multi-layer film including the steps of: (1) forming an under layer film onto a substrate by coating an under layer film material containing a resin represented by the following general formula (1) in which a compound having a bisnaphthol group has been made a novolac resin, and curing the same by heat treatment at a temperature in a range of 300° C. or higher and 700° C. or lower for 10 seconds to 600 seconds, (2) forming a silicon film onto the under layer film, (3) forming a hydrocarbon film onto the silicon film by coating a hydrocarbon film material, and (4) forming a silicon-oxidized film onto the hydrocarbon film by coating a silicon-oxidized film material. There can be provided a process for forming a multi-layer film which can reduce reflectance, and useful for a patterning process with high dimensional accuracy of dry etching.; |
申请公布号 |
US2016008844(A1) |
申请公布日期 |
2016.01.14 |
申请号 |
US201514742358 |
申请日期 |
2015.06.17 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HATAKEYAMA Jun;NAGATA Takeshi |
分类号 |
B05D1/00;C23C14/34 |
主分类号 |
B05D1/00 |
代理机构 |
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代理人 |
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主权项 |
1. A process for forming a multi-layer film comprising the steps of:
(1) forming an under layer film onto a substrate by coating an under layer film material containing a resin represented by the following general formula (1) in which a compound having a bisnaphthol group has been made a novolac resin, and curing the same by heat treatment at a temperature in a range of 300° C. or higher and 700° C. or lower for 10 seconds to 600 seconds, (2) forming a silicon film onto the under layer film, (3) forming a hydrocarbon film onto the silicon film by coating a hydrocarbon film material, and (4) forming a silicon-oxidized film onto the hydrocarbon film by coating a silicon-oxidized film material, wherein R1 and R2 each independently represent a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 20 carbon atoms or an alkenyl group having 2 to 20 carbon atoms; R3 and R4 each independently represent a hydrogen atom or a glycidyl group; R5 represents a linear or branched alkylene group having 1 to 10 carbon atoms; R6 and R7 each independently represent a benzene ring or a naphthalene ring, and a hydrogen atom(s) in the benzene ring or the naphthalene ring may be substituted by a hydrocarbon group having 1 to 6 carbon atoms; and “p” and “q” each independently represent 1 or 2. |
地址 |
Tokyo JP |