发明名称 |
ENHANCING NUCLEATION IN PHASE-CHANGE MEMORY CELLS |
摘要 |
Various embodiments disclosed herein comprise methods and apparatuses for placing phase-change memory (PCM) cells of a memory array into a temperature regime where nucleation probability of the PCM cells is enhanced prior to applying a subsequent SET programming signal. In one embodiment, the method includes applying a nucleation signal to the PCM cells to form nucleation sites within the memory array where the nucleation signal has a non-zero rising-edge. A programming signal is subsequently applied to achieve a desired level of crystallinity within selected ones of the plurality of PCM cells. Additional methods and apparatuses are also described. |
申请公布号 |
WO2016007376(A1) |
申请公布日期 |
2016.01.14 |
申请号 |
WO2015US39025 |
申请日期 |
2015.07.02 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
PIROVANO, AGOSTINO;PELLIZZER, FABIO;CONTI, ANNA MARIA;FUGAZZA, DAVIDE;KALB, JOHANNES A. |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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