| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which improves luminous efficiency by selecting a band gap of a well layer for quantum wells with different well widths of asymmetrical quantum well active layers, making an energy band in the vicinity of the quantum well close to a flat state and optimizing carrier injection into the quantum well.SOLUTION: A first quantum well 141 and a second quantum well 142 with the different well widths of the semiconductor light-emitting element are comprised of InGaAs. A well width Lw of the first quantum well, an In composition In(Lw) of the well layer, a well width Ln of the second quantum well and an In composition In(Ln) of the well layer satisfy a following formula (1) of 0.0631(Ln/Lw)-0.134(Ln/Lw)+0.0712<In(Ln)-In(Lw)<0.0068(Ln/Lw)-0.1995(Ln/Lw)+0.192(1). |
