发明名称 |
DUAL STI INTEGRATED CIRCUIT INCLUDING FDSOI TRANSISTORS AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
An integrated circuit, including: a first cell, including: FDSOI transistors; a UTBOX layer lying beneath the transistors; a first well lying beneath the insulator layer and beneath the transistors, the first well having a first type of doping; a first ground plane having a second type of doping, located beneath one of the transistors and between the insulator layer and the first well; a first STI separating the transistors and crossing the insulator layer; a first conductive element forming an electrical connection between the first well and the first ground plane, located under the first STI; a second cell including a second well; a second STI separating the cells, crossing the insulator layer and reaching the bottom of the first and second wells. |
申请公布号 |
US2016013205(A1) |
申请公布日期 |
2016.01.14 |
申请号 |
US201314771025 |
申请日期 |
2013.02.28 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES ;INTERNATIONAL BUSINESS MACHINES CORPORATION ;STMICROELECTRONICS, INC. |
发明人 |
VINET Maud;CHENG Kangguo;DORIS Bruce;GRENOUILLET Laurent;KHAKIFIROOZ Ali;LE TIEC Yannick;LIU Qing |
分类号 |
H01L27/12;H01L21/84;H01L21/8238;H01L29/06 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Paris FR |