发明名称 DRIVING METHOD OF SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
摘要 A driving method of a semiconductor device that takes three-dimensional images with short duration is provided. In a first step, a light source starts to emit light, and first potential corresponding to the total amount of light received by a first photoelectric conversion element and a second photoelectric conversion element is written to a first charge accumulation region. In a second step, the light source stops emitting light and second potential corresponding to the total amount of light received by the first photoelectric conversion element and the second photoelectric conversion element is written to a second charge accumulation region. In a third step, first data corresponding to the potential written to the first charge accumulation region is read. In a fourth step, second data corresponding to the potential written to the second charge accumulation region is read.
申请公布号 US2016014362(A1) 申请公布日期 2016.01.14
申请号 US201514790801 申请日期 2015.07.02
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 KUROKAWA Yoshiyuki
分类号 H04N5/374;H04N5/351;H04N5/369 主分类号 H04N5/374
代理机构 代理人
主权项 1. A driving method of a semiconductor device, the semiconductor device comprising: a first circuit comprising a first photoelectric conversion element, a first transistor, and a first charge accumulation region;a second circuit comprising a second photoelectric conversion element, a second transistor, and a second charge accumulation region;a third transistor; anda light source,wherein one of a source and a drain of the first transistor is electrically connected to the first photoelectric conversion element,wherein the other of the source and the drain of the first transistor is electrically connected to the first charge accumulation region,wherein one of a source and a drain of the second transistor is electrically connected to the second photoelectric conversion element,wherein the other of the source and the drain of the second transistor is electrically connected to the second charge accumulation region,wherein one of a source and a drain of the third transistor is electrically connected to the first photoelectric conversion element, andwherein the other of the source and the drain of the third transistor is electrically connected to the second photoelectric conversion element, the driving method comprising a first step, a second step, a third step, and a fourth step, wherein the light source starts to emit light in the first step, wherein the first transistor and the third transistor are on in the first step, wherein the second transistor is off in the first step, wherein first potential corresponding to a total amount of light received by the first photoelectric conversion element and the second photoelectric conversion element is written to the first charge accumulation region in the first step, wherein the light source stops emitting light in the second step, wherein the first transistor is off in the second step, wherein the second transistor and the third transistor are on in the second step, wherein second potential corresponding to a total amount of light received by the first photoelectric conversion element and the second photoelectric conversion element is written to the second charge accumulation region in the second step, wherein the first transistor and the second transistor are off in the third step, wherein first data corresponding to the first potential written to the first charge accumulation region is read in the third step, wherein the first transistor and the second transistor are off in the fourth step, and wherein second data corresponding to the second potential written to the second charge accumulation region is read in the fourth step.
地址 Atsugi-shi JP