发明名称 SEMICONDUCTOR DEVICE AND DRIVER CIRCUIT WITH AN ACTIVE DEVICE AND ISOLATION STRUCTURE INTERCONNECTED THROUGH A DIODE CIRCUIT, AND METHOD OF MANUFACTURE THEREOF
摘要 Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a body region of the second conductivity type, and the diode circuit is connected between the isolation structure and the body region. The diode circuit may include one or more Schottky diodes and/or PN junction diodes. In further embodiments, the diode circuit may include one or more resistive networks in series and/or parallel with the Schottky and/or PN diode(s).
申请公布号 US2016013182(A1) 申请公布日期 2016.01.14
申请号 US201514859806 申请日期 2015.09.21
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 CHEN WEIZE;BODE HUBERT M.;DE SOUZA RICHARD J.;PARRIS PATRICE M.
分类号 H01L27/07;H01L29/66;H01L21/761 主分类号 H01L27/07
代理机构 代理人
主权项 1. A method for forming a semiconductor device, the method comprising the steps of: forming a buried layer below a top substrate surface of a semiconductor substrate having a first conductivity type, wherein the buried layer has a second conductivity type that is different from the first conductivity type; forming a sinker region between the top substrate surface and the buried layer, wherein the sinker region has the second conductivity type, and an isolation structure is formed by the sinker region and the buried layer; forming an active device in a portion of the semiconductor substrate contained by the isolation structure, wherein the active device includes a body region of the second conductivity type and a source region of the first conductivity type formed in the body region, and wherein the body region and the isolation structure are separated by a portion of the semiconductor substrate having the first conductivity type; and forming a diode circuit between the isolation structure and the body region.
地址 AUSTIN TX US