SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves less occupied area; or provide a semiconductor device which achieves high integration degree; or provide a semiconductor device which achieves high productivity.SOLUTION: An integrated circuit manufacturing method comprises the steps of: forming af first insulation film on a p-type transistor, and a transistor using an oxide semiconductor on the first insulation film, and a second insulation film on the transistor; forming in the fist insulation film and the second insulation film, an opening, that is, a contact hole having the oxide semiconductor of the transistor on part of a sidewall; and forming an electrode for connecting the p-type transistor and the transistor using the oxide semiconductor.