METHOD FOR PRODUCING SiC WAFER, METHOD FOR PRODUCING SiC SEMICONDUCTOR, AND SILICON CARBIDE COMPOSITE SUBSTRATE

摘要

Provided is a method for producing an SiC wafer, said method comprising: a step of preparing a silicon carbide composite substrate that has a vitreous carbon layer on the surface of an SiC substrate and a CVD-SiC layer atop the vitreous carbon layer, and preparing a single-crystal SiC substrate that has on the surface an ion injection layer into which hydrogen ions have been injected; a joining step in which a joined body is obtained by bonding the CVD-SiC layer of the silicon carbide composite substrate and the ion injection layer of the single-crystal SiC substrate; a first separation step in which a single-crystal coated substrate is obtained by heating the joined body and separating the ion injection layer from the single-crystal SiC substrate; and a second separation step in which an SiC wafer is obtained by separating the vitreous carbon layer and CVD-SiC layer of the single-crystal coated substrate.