SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device suitable for miniaturization and densification.SOLUTION: A semiconductor device comprises a first transistor, a first insulation film on the first transistor, a second insulation film on the first insulation film, a second transistor on the second insulation film, a first conductive film electrically connected to the first transistor, and a second conductive film electrically connected to the first conductive film and the second transistor. The first conductive film pierces the first insulation film and the second conductive film pierces the second insulation film and a semiconductor film and a source electrode or a drain electrode of the second transistor. A channel formation region of the first transistor has a single crystal semiconductor and a channel formation region of the second transistor has an oxide semiconductor, and a width of a bottom face of the second conductive film is equal to or less than 5 nm.