APPARATUS AND METHOD FOR TUNING A PLASMA PROFILE USING A TUNING ELECTRODE IN A PROCESSING CHAMBER

摘要

Embodiments of the present invention relate to apparatus for enhancing deposition rate and improving a plasma profile during plasma processing of a substrate. According to embodiments, the apparatus includes a tuning electrode disposed in a substrate support pedestal and electrically coupled to a variable capacitor. The capacitance is controlled to control the RF and resulting plasma coupling to the tuning electrode. The plasma profile and the resulting deposition rate and deposited film thickness across the substrate are correspondingly controlled by adjusting the capacitance and impedance at the tuning electrode.

主权项

1. A plasma processing apparatus, comprising:
a chamber body and a powered gas distribution manifold enclosing a process volume; a pedestal disposed in the process volume for supporting a substrate; and a tuning electrode disposed within the pedestal and electrically coupled to a variable capacitor.