发明名称 HIGH POWER SPIN TORQUE OSCILLATOR INTEGRATED ON A TRANSISTOR
摘要 Example embodiments are related to a high power spin torque oscillator that is integrated by combining a transistor. The high power spin torque oscillator according to example embodiments may include a spin torque oscillator and a transistor. The spin torque oscillator may perform an oscillation function and a transistor may perform an amplification function by integrating the spin torque oscillator and a transistor in one chip. The transistor may amplify an amplification signal of the spin torque oscillator. The high power spin torque oscillator may be integrated on FET or BJT.
申请公布号 US2016013754(A1) 申请公布日期 2016.01.14
申请号 US201414554656 申请日期 2014.11.26
申请人 Korea Advanced Institute of Science and Technology 发明人 Shin Min Cheol;Kang Doo Hyung;Lee Jae Hyun
分类号 H03B15/00;H01L29/66;H01L43/12;H01L27/22;H01L43/02;H01L43/08 主分类号 H03B15/00
代理机构 代理人
主权项 1. A method of manufacturing a high power spin torque oscillator comprising: forming a MOSFET structure by forming a source, a drain and a gate on a silicon substrate; and forming a spin torque oscillator by stacking a free magnetic layer, a nonmagnetic layer and a fixed magnetic layer between an insulator of the gate and a gate electrode, wherein the spin torque oscillator having an oscillation function is integrated on a transistor having an amplification function.
地址 Yuseong-gu KR