发明名称 |
HIGH POWER SPIN TORQUE OSCILLATOR INTEGRATED ON A TRANSISTOR |
摘要 |
Example embodiments are related to a high power spin torque oscillator that is integrated by combining a transistor. The high power spin torque oscillator according to example embodiments may include a spin torque oscillator and a transistor. The spin torque oscillator may perform an oscillation function and a transistor may perform an amplification function by integrating the spin torque oscillator and a transistor in one chip. The transistor may amplify an amplification signal of the spin torque oscillator. The high power spin torque oscillator may be integrated on FET or BJT. |
申请公布号 |
US2016013754(A1) |
申请公布日期 |
2016.01.14 |
申请号 |
US201414554656 |
申请日期 |
2014.11.26 |
申请人 |
Korea Advanced Institute of Science and Technology |
发明人 |
Shin Min Cheol;Kang Doo Hyung;Lee Jae Hyun |
分类号 |
H03B15/00;H01L29/66;H01L43/12;H01L27/22;H01L43/02;H01L43/08 |
主分类号 |
H03B15/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a high power spin torque oscillator comprising:
forming a MOSFET structure by forming a source, a drain and a gate on a silicon substrate; and forming a spin torque oscillator by stacking a free magnetic layer, a nonmagnetic layer and a fixed magnetic layer between an insulator of the gate and a gate electrode, wherein the spin torque oscillator having an oscillation function is integrated on a transistor having an amplification function. |
地址 |
Yuseong-gu KR |