| 摘要 |
The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers; a reflective layer provided on one side of the plurality of semiconductor layers and reflecting light generated by an active layer; a first electrode and a second electrode for supplying electrons and holes, at least one of the first electrode and the second electrode being electrically isolated from the plurality of semiconductor layers and being in electrical communication with the plurality of semiconductor layers by an electrical connection; and a growth substrate provided on the opposite side of the reflective layer on the basis of the plurality of semiconductor layers and having a hexahedral shape, wherein one side of the hexahedron has a bottom surface having the plurality of semiconductor layers formed thereon, a top surface opposite to the bottom surface, and two side surfaces connecting the bottom surface and the top surface, the top surface having a length equal to or less than 150 ㎛. |
