| 摘要 |
A semiconductor device as set forth in an embodiment comprises: an SiC semiconductor layer; a gate electrode; a gate insulating film provided between the SiC semiconductor layer and the gate electrode; and a region provided between the SiC semiconductor layer and gate insulating film containing at least one element selected from the group consisting of Sb (antimony), Sc (scandium), Y (yttrium), La (lanthanum), and the lanthanides (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu), wherein the peak concentration of the element is between 1×1019cm-3 and 2.4×1022cm-3, inclusive. |
