SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide correction means of a threshold voltage of a semiconductor device.SOLUTION: In a semiconductor device in which at least one transistor out of transistors which compose an inverter has a semiconductor, a source electrode or a drain electrode which is electrically connected to the semiconductor, a gate electrode and a charge capture layer provided between the gate electrode and the semiconductor, potential of the gate electrode of the transistor is made to be higher than potential of each of the source electrode and the drain electrode, and the charge capture layer is caused to hold the potential for a short time up to 5 s to capture electrons and thereby to increase a threshold voltage. At this time, threshold voltage of the transistor of the semiconductor device becomes appropriate by differentiating potentials among the gate electrode and the source electrode or the drain electrode of each semiconductor device from each other, the threshold voltage of the transistor of the semiconductor device becomes appropriate.