摘要 |
A silicon substrate has a chamber that penetrates vertically. A diaphragm is formed on the upper surface of the silicon substrate so as to cover the upper portion of the chamber. Also, a back plate is provided above the silicon substrate so as to cover the diaphragm, and a fixed electrode plate is provided on the lower surface of the back plate in opposition to the diaphragm. Multiple acoustic holes, which penetrate vertically and are for allowing the passage of acoustic vibration, are formed in the back plate (28) and the fixed electrode plate. Multiple through-holes that have a smaller opening area than the acoustic holes are formed in a large displacement region of the diaphragm. |