SOLID-STATE IMAGE SENSOR

摘要

A solid-state image sensor is provided. The solid-state image sensor includes a substrate. The substrate includes an electrode layer, an insulating layer arranged on the electrode layer, and a semiconductor layer arranged on the insulating layer. The semiconductor layer includes a first semiconductor region of a first conductivity type, a second semiconductor region configured to accumulate charges generated by photoelectric conversion, the second semiconductor region being arranged on the first semiconductor region and having a second conductivity type opposite to the first conductivity type, and a third semiconductor region of the second conductivity type to which the charges accumulated in the second semiconductor region are transferred.

主权项

1. A solid-state image sensor comprising a substrate,
the substrate including an electrode layer, an insulating layer arranged on the electrode layer, and a semiconductor layer arranged on the insulating layer, wherein the semiconductor layer includes: a first semiconductor region of a first conductivity type; a second semiconductor region configured to accumulate charges generated by photoelectric conversion, the second semiconductor region being arranged on the first semiconductor region and having a second conductivity type opposite to the first conductivity type; and a third semiconductor region of the second conductivity type to which the charges accumulated in the second semiconductor region are transferred.