SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

One semiconductor device includes an element-isolation region formed on a semiconductor substrate, an active region surrounded by said element-isolation region, a semiconductor pillar in the active region and protruding from the surface of the substrate, a gate electrode on a side surface of the pillar, with a gate-insulating film interposed there between, and extending in a first direction, a pillar-top diffusion layer in the top-end section of the pillar, a pillar-bottom diffusion layer in the bottom-end section of the pillar, a channel section between the pillar-top diffusion layer and the pillar-bottom diffusion layer, a silicide layer beneath the pillar-bottom diffusion layer and extending in a second direction perpendicular to the first direction, a contact plug to contact the silicide layer in the bottom-end section, and top-layer wiring to contact the contact plug in the top-end section. The contact plug is connected to the silicide layer through the pillar-bottom diffusion layer.

主权项

1. A semiconductor device comprising:
an element-isolation region formed on a semiconductor substrate; an active region surrounded by the element-isolation region; a semiconductor pillar disposed in the active region so as to protrude from the surface of the semiconductor substrate; a gate electrode disposed on a side surface of the semiconductor pillar, with a gate insulating film interposed in between, so as to extend in a first direction; a pillar-top diffusion layer disposed on a top-end section of the semiconductor pillar; a pillar-bottom diffusion layer disposed on a bottom-end section of the semiconductor pillar; a channel section disposed between the pillar-top diffusion layer and the pillar-bottom diffusion layer; a silicide layer disposed beneath the pillar-bottom diffusion layer so as to extend in a second direction perpendicular to the first direction; a contact plug disposed so as to contact the silicide layer at a bottom-end section; and a top-layer wiring disposed so as to contact the contact plug at a top-end section; wherein the contact plug passes through the pillar-bottom diffusion layer to connect to the silicide layer.